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Non-stationary spin-polarized currents tuning in correlated quantum dot
Created by , 2018-09-20 16:04:02
The possibility to create, manipulate and detect spin-polarized currents is at the very heart of semiconductor spintronics [1]. Stationary spin polarized currents were successfully generated in various semiconductor heterostructures and low-dimensional mesoscopic samples [2]. However, controllable manipulation of charge and spin states, applicable for ultra small size electronic devices design requires analysis of non-stationary effects and transient properties [3-5]. Consequently, the problem of non-stationary evolution of initially prepared spin and charge state in correlated nanostructures (quantum dots, impurity atoms, etc.) is really vital. In the present paper we analyze non-stationary spin-polarized currents flowing through the correlated single-level quantum dot localized between non-magnetic leads in the presence of applied bias voltage and external magnetic field. We reveal, that spin polarization and direction of the non-stationary currents can be simultaneously inverted by sudden changing of applied bias voltage. We also analyze time evolution of the spin polarization degree and demonstrate the possibility of its sign changing following the applied bias polarity. This effect opens the possibility for the spin-polarization train pulses generation with the opposite degree of polarization. Application of external magnetic field allows to consider correlated single-level quantum dot as an effective non-stationary spin filter. [1] I. Zutic, J. Fabian, S. Das Sarma, Rev. Mod. Phys., 76, 323 (2004) [2] M.E. Torio, K. Hallberg, S. Flach, A.E. Miroshnichenko, M. Titov, Eur. Phys. J. B37, 399 (2004) [3] N.S. Maslova, I. V. Rozhansky, V.N. Mantsevich, P.I. Arseyev, N.S. Averkiev, E. Lahderanta, Phys. Rev. B 97, 195445 (2018) [4] V.N. Mantsevich, N.S. Maslova, P.I. Arseyev, Physica E, 93,224 (2017) [5] N.S. Maslova, P.I. Arseyev, V.N. Mantsevich, Solid State Comm. 248, 21 (2016)
Mantsevich V.N., Maslova N.S., Arseyev P.I. JETP Letters 108, №7 (2017)
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