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VOLUME 82 (2005) | ISSUE 5 | PAGE 312
Identifying the electronic properties of the Ge(111)-(2×1) surface by low temperature scanning tunneling microscopy
PACS: 68.35.Dv, 68.37.Ef, 73.20.At
Abstract
We present the results of our low temperature scanning tunneling microscopy (STM) investigation of the clean Ge(111) surface. Our experiments enable the first time STM observation of one-dimensional surface screening around surface defects. We identify the dominating role of surface states in the low temperature STM imaging as well as the important influence of non-equilibrium kinetics on the measured tunneling spectra.