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VOLUME 82 (2005) | ISSUE 6 | PAGE 412
Quenched Disorder Effects in Electron Transport in Si Inversion Layers in the Dilute Regime
PACS: 71.27.+a, 71.30.+h, 72.20.Ee, 73.40.Qv
Abstract
In order to reveal the effects of disorder in the vicinity of the apparent metal-insulator transition in 2D, we studied the electron transport in the same Si- device after cooling it down to 4 K at different fixed values of the gate voltage V cool. Different V cool did not modify significantly either the momentum relaxation rate or the strength of electron-electron interactions. However, the temperature dependences of the resistance and the magnetoresistance in parallel magnetic fields, in the vicinity of the 2D metal-insulator transition, carry a strong imprint of the quenched disorder determined by V cool. This demonstrates that the observed transition between metallic and insulating regimes, besides universal effects of electron-electron interaction, depends on a sample-specific localized states (disorder). We report an evidence for a weak exchange in electrons between the reservoirs of extended and resonant localized states which occur at low densities. The strong cool-down dependent variations of ρ(T), we believe, are evidence for developing spatially inhomogeneous state in the critical regime.