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VOLUME 84 (2006) | ISSUE 2 |
PAGE 99
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Tunneling current induced phonon generation in nanostructures
P. I. Arseyev, N. S. Maslova
P.N.Lebedev Physical Institute of RAS, 119991 Moscow, Russia Department of Physics, Moscow State University, 119992 Moscow, Russia
PACS: 73.40.Gk, 73.63.-b
Abstract
We analyze generation of phonons in tunneling structures with two
electron states coupled by electron-phonon interaction. The conditions of
strong vibration excitations are determined and dependence of
non-equilibrium phonon occupation numbers on the applied bias is found. For
high vibration excitation levels self consistent theory for the tunneling
transport is presented.
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