Quantum Hall liquid-insulator and plateau-to-plateau transitions in a high mobility 2DEG in a HgTe quantum well
E. B. Olshanetsky, S. Sassine+*, Z. D. Kvon, N. N. Mikhailov, S. A. Dvoretsky, J. C. Portal, A. L. Aseev
Institute of Semiconductor Physics Siberian br. RAS, 630090 Novosibirsk, Russia +GHMFL, CNRS, BP, F-38042, Grenoble, France *INSA, F-31077, Toulouse, France Institut Universitaire de France, Toulouse, France
PACS: 74.50.+r, 74.80.Fp
Abstract
The present work reports the results of a study of the
magnetic field induced Quantum Hall liquid-insulator transition
and the plateau-to-plateau transition in a high mobility two-dimensional
electron gas in a HgTe quantum well. The applicability of
the universal scaling models (such as the universal critical exponent
description and the semicircle model) for the description of these transitions
is
analyzed. We come to the conclusion that neither of these descriptions
is completely adequate for the system under study.
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