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VOLUME 85 (2007) | ISSUE 6 | PAGE 334
Bias voltage dependent shift of the atomic-scale structure of the Ge(111)-(2×1) reconstructed surface measured by low temperature scanning tunneling microscopy
PACS: 68.35.Dv, 68.37.Ef, 73.20.At
Abstract
We present the results of our low temperature scanning tunneling microscopy (STM) investigations of the clean Ge(111) surface. We observe bias dependent shifts of the atomic-scale structure caused by the (2×1) reconstruction of the Ge(111) surface. A detailed comparison of experimental data with theoretical predictions based on the π-bonded chain model allows us to conclude that inelastic tip-sample interaction plays a significant role in STM imaging of the Ge(111)-(2×1) reconstructed surface.