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VOLUME 47 (1988) | ISSUE 1 | PAGE 59
Transitions between dissipationless and dissipative states at GaAs-AIx, Ga1-x As heterostructures in the quantum Hall effect
Breakdown at a GaAs heterojunction has been studied at T= 0.35-3.5 К and H~ 120 kOe. The results reveal the existence of metastable states with a lifetime between 10 ~3 s and > 100 s, the development of breakdown in the form of a chain of subjumps inpxx, a hysteresis in each of the individual subjumps inpxx, and an effect of the direction of the Hall field on the current-voltage characteristic of the breakdown.