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VOLUME 47 (1988) | ISSUE 10 | PAGE 522
Interaction of positrons with the surface of a silicon single crystal
The existence of bound states of positrons at a silicon surface has been observed. Such states are possible only for/?-type silicon, produced by doping with boron, beginning at carrier densities ρ ~ 1016 cm ~3. These states are explained in terms of a change in the sign of the positron work function φ+ upon a change in t he carrier density.