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VOLUME 48 (1988) | ISSUE 1 | PAGE 27
The Hall effect and the thermal emf of single-crystal films YBa2Cu3O7-x and HoYBa2Cu3O7-x
The temperature dependence of the Hall coefficient RH, the mobility of current carriers μ, the thermal emf a of Y (Ho) Ba2Cu307 _ x single-crystal films, and the dependence of RH on the magnetic field strength were studied experimentally. The quantities R H and a were found to have a positive sign. The number of carriers per cell was found to be 0.9 (120 К)-1.7 (300 К).