Activationless hopping conductivity along the states of the Coulomb gap in a-Si<Mn>
Dvurechenskii A. V., Dravin V. A., Yakimov A. I.
A hopping charge transfer along localized states in the region of a Coulomb gap in strong electric fields has been studied. Experimental observation of 3D systems has shown for the first time that activationless hopping conductivity changes with increasing field strength Fin accordance with a(F) ~exp[ — (F0/F)l/2].