Submillimeter photoconductivity in inversion layers at a silicon surface
Beregulin E. V. , Ganichev S. D., Glukh K. Yu., Gusev G. M., Kvon Z. D., Martisov M. Yu., Shik A. Ya., Yaroshetskii I. D.
A fast submillimeter photoconductivity has been detected in inversion layers at the Si surface. Because of the short photoresponse time ( < 40 ns) and the common properties of the resonant and nonresonant photoconductivities, this effect can be linked with the heating of a two-dimensional electron gas.