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VOLUME 48 (1988) | ISSUE 6 | PAGE 342
Electron localization at a heterojunction of the second kind
A localization of photoelectrons has been observed in a 2D potential well at a heterojunction of the second kind in the /?-GaInAsSb-/?-GaSb system. The localization energy of the electrons in the well is shown to be determined by the level of doping of the narrow-gap layer; specifically, the localization energy increases with decreasing doping level. The filling of the well depends in a nonmonotonic way on the temperature, going through a maximum at 20-50 K. An external magnetic field directed parallel to the heterojunction strongly affects the filling of the wells.