Filling of second quantum-size subband of a 2D hole gas at a Si(110) surface
Dorozhkin S. I. , Of shanetskii E. B.
A change in the state density of a gas of 2D carriers upon the filling of the next quantum-size subband has been observed directly by the method of capacitance spectroscopy. The carrier g-factor is estimated on the basis of the Shubnikov-de Haas oscillations. A "pinning" of the bottom of a subband near the Fermi level has been observed.
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![](/ps/1110/article_16789_800_head.png "A change in the state density of a gas of 2D carriers upon the filling of the next quantum-size subband has been observed directly by the method of capacitance spectroscopy. The carrier g-factor is estimated on the basis of the Shubnikov-de Haas oscillations. A "pinning" of the bottom of a subband near the Fermi level has been observed.")