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VOLUME 49 (1989) | ISSUE 1 | PAGE 19
Magnetically induced polarization-dependent ballistic photo-emf in a semiconductor-metal structure
A magnetic field directed parallel to the surface has been observed to induce a polarization dependence of the photo-emf in Al-n-GaAs structures at 1.6-4.2 K. The effect stems from an optical alignment of pulses of ballistic photoelectrons and an inelastic interaction with the semiconductor-metal interface.