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VOLUME 49 (1989) | ISSUE 1 | PAGE 39
Intensity of extrinsic optical transitions in phosphorus-doped silicon
The oscillator strengths f„pM of extrinsic optical transitions in silicon doped with phosphorus to a concentration NP — 1.7 X 1014 cm-3 have been determined. The values found for/ÐòÍ are approximately half those predicted by the theory of Beinikhesand Kogan {Zh. Eksp. Teor. Fix. 93,285 (1987) [Sov. Phys. JETP 66, 164(1987)]},