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VOLUME 49 (1989) | ISSUE 5 | PAGE 290
Electron-hole transitions in the scattering of current carriers by the surface of a bismuth sample
The method of transverse electron focusing {V. S. Tsoi, Piz'ma Zh. Eksp. Teor. Fiz. 19, 114 (1974) [JETP Lett. 19,70 (1974) ]} has been developed through the use of three point contacts. The following have been observed in bismuth: 1) a focusing of holes; 2) electron-hole transitions upon the scattering of current carriers by the surface; 3) a specular reflection of holes from the bisector plane during normal incidence (with a diffuse reflection of electrons {V. S. Tsoi and N. P. Tsoi, Zh. Eksp. Teor. Fiz. 73,289 [ Sov. Phys. JETP 46,150 (1977) ]) This specular reflection is evidence that there is positive charge at the surface.