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VOLUME 49 (1989) | ISSUE 7 | PAGE 396
Characteristic features of the current noise in the mesoscopic channel of a field-effect GaAs transistor
Mesoscopic fluctuations in the power level of a current noise and a conversion of the l//hoise to a "telegraph" noise of a single noise source, which occur as a result of a change in the electron density, have been detected in a short GaAs channel with a hopping conductivity.