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VOLUME 49 (1989) | ISSUE 11 | PAGE 610
Ballistic electron transport through epitaxial GaAs films in a magnetically induced surface photocurrent
A nonmonotonic dependence of the magnetically induced surface photocurrent on the magnetic field has been observed. This behavior is evidence of a transport of ballistic photoelectrons through a thick (d ~ \0μτη) epitaxial film of w-type GaAs and of a scattering of these electrons at the interface with the substrate. The diffuseness coefficient of the scattering of 30-meV electrons by the free surface of the epitaxial film is Px —0.2, and that of the scattering by the film-substrate interface is P7 ~0.7.