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VOLUME 49 (1989) | ISSUE 11 | PAGE 630
Direct determination of the phase of the reflection amplitude by means of standing x-ray waves
A method for directly determining the phase of the reflection amplitude by means of standing x-ray waves has been implemented experimentally. The method is based on a measurement of the x-ray reflection and the photoelectron emission at large deviations from the Bragg angle. The solution of the phase problem has made it possible to unambiguously determine the structure of the real surface layers of single crystals. This new approach is illustrated by the example of a silicon crystal after ion implantation.