Effect of anisotropy of epitaxial YBa2Cu30x films on tunneling properties of YBa2Cu3Ox-metal junctions
Boguslavskii Yu. M. , Rudenko E. M.
"Planar" and "edge" tunnel junctions based on epitaxial YBa2Cu3(\ films have been studied. The differences in the current-voltage characteristics of the contacts and the structural features on these characteristics are linked with an anisotropy of the state density N(e) and the existence of a narrow peak in N(e) near the Fermi level in the Cu-O plane. A change in the YB2Cu3Ox state density has been observed at T~ 30 K.
Home
![](/ps/1124/article_17034_800_head.png ""Planar" and "edge" tunnel junctions based on epitaxial YBa<sub>2</sub>Cu<sub>3</sub>(\ films have been studied. The differences in the current-voltage characteristics of the contacts and the structural features on these characteristics are linked with an anisotropy of the state density <i>N(e) </i>and the existence of a narrow peak in <i>N(e) </i>near the Fermi level in the Cu-O plane. A change in the YB<sub>2</sub>Cu<sub>3</sub>O<sub>x</sub> state density has been observed at <i>T~ </i>30 K.")