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VOLUME 50 (1989) | ISSUE 3 | PAGE 141
Photoluminescence of δ-p-doped gallium arsenide
The mechanisms for radiative recombination in <5-/?-doped GaAs have been studied by the method of low-temperature photoluminescence. Intense luminescence lines which have been observed are evidence of a recombination of photoelectrons with holes in quantum-well levels.