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VOLUME 50 (1989) | ISSUE 6 | PAGE 287
Change in recombination mechanism in narrow-gap semiconductors during uniaxial compression
During uniaxial compression of a narrow-gap semiconductor, the rate of Auger recombination decreases, while the rate of radiative recombination increases, because of a restructuring of the band spectrum. It is thus possible to raise the limiting lifetime and also to identify the recombination mechanism.