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VOLUME 50 (1989) | ISSUE 8 | PAGE 363
Kinetics of photocrystallization and Raman scattering in the bulk amorphous semiconductor GaSb
A photocrystallization of the bulk amorphous semiconductor α-GaSb has been detected on the basis of the Raman spectra. The threshold densities have been determined. The behavior of the photocrystallization as a function of the illumination time and the length of the exciting pulses has been studied.