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VOLUME 50 (1989) | ISSUE 11 | PAGE 462
Picosecond superradiance in GaAs during interband absorption of intense short light pulses
It is shown theoretically that a recombination superradiance can develop and self-quench over picosecond time scales during interband absorption of intense light pulses in a semiconductor. The self-quenching results from a heating of nonequilibrium carriers and is accompanied by an increase in their density.