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VOLUME 51 (1990) | ISSUE 3 | PAGE 154
Spin mechanism for hopping magnetoresistance in La2CuO4
A spin mechanism is proposed for a hopping magnetoresistance. The mechanism is based on a splitting of impurity states by spin in a molecular field and on a diiference between the probabilities for hops with and without spin flip. As a result, the resistance depends on the magnitude and relative orientation of the molecular fields near impurities. This orientation is in turn controlled by an external magnetic field.