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VOLUME 51 (1990) | ISSUE 4 | PAGE 219
Stimulated emission and the Mott transition in direct-gap semiconductor
A change in the delay of a stimulated-light pulse in CdSe (80 K) from 30-40 ps at high excitation levels to 0.6-1 ns at low excitation levels of ultrashort light pulses has been detected. This change is attributable to the change in the recombination mechanism: a transition from an electron-hole plasma to high-density excitons.