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VOLUME 51 (1990) | ISSUE 7 | PAGE 377
Relaxation of extrinsic excitation in silicon with group III and V dopants
The kinetics of the extrinsic photoresponse of silicon doped with Ga, Bi, B, In, and As has been studied with static and microwave (37-GHz) bias voltages. In the case of a microwave bias, there is a slow relaxation (10 ~5 s) of the B, As, and In dopants as a result of the long lifetime of their deep excited states.