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VOLUME 51 (1990) | ISSUE 10 | PAGE 516
Intensification of multiphonon resonant Raman scattering in quasi-2D electron system
Multiphonon resonant Raman scattering in quasi-2D electron systems (quantum wells and inversion layers) is predicted to be more intense than that in a bulk semiconductor by a large factor (a~\ where a < 1 is the dimensionless electron-phonon coupling constant). The threshold for this intensification shifts away from four-phonon scattering (in the volume) toward three-phonon scattering in the 2D case.