Home
For authors
Submission status

Current
Archive
Archive (English)
   Volumes 21-40
   Volumes 1-20
   Volumes 41-62
      Volume 62
      Volume 61
      Volume 60
      Volume 59
      Volume 58
      Volume 57
      Volume 56
      Volume 55
      Volume 54
      Volume 53
      Volume 52
      Volume 51
      Volume 50
      Volume 49
      Volume 48
      Volume 47
      Volume 46
      Volume 45
      Volume 44
      Volume 43
      Volume 42
      Volume 41
Search
VOLUME 53 (1991) | ISSUE 2 | PAGE 96
Photoluminescence of (InAs)n(GaAs)m superlattices under stress
A study of the photoluminescence of (In As) „ (GaAs) m superlattices reveals that its intensity may be substantially higher than that of GaAs in the barriers. A mechanism of carrier trapping in quantum wells is proposed. The transition from the case of noninteracting quantum wells to superlattices as the barrier thickness is varied is analyzed. A polarized photoluminescence of (In As) „ (GaAs) ,„ superlattices under stress has been observed.