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VOLUME 53 (1991) | ISSUE 3 | PAGE 167
Strong excitation of local oscillations of defects in the manyphonon recombination of electrons and holes
A mechanism for strong excitation of local oscillations of a defect with a deep level in the case of many-phonon recombination and generation on a defect of electron-hole pairs under conditions of a large electron and hole concentration is examined. This mechanism is used to interpret the experimental data on inelastic sputtering of semiconductors and insulators by ion bombardment.