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VOLUME 53 (1991) | ISSUE 5 | PAGE 237
Current-voltage characteristic during extrinsic breakdown in the semimagnetic semiconductor p-MnxHg1-xTe
A mechanism is proposed for the occurrence of the S-shaped current-voltage characteristic which has been observed inp~Mnx Hgj _ x Те. The mechanism involves the development of a nonequilibrium carrier distribution in an impurity band during impact ionization.