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VOLUME 52 (1990) | ISSUE 6 | PAGE 959
Stimulated emission on transitions between excited states and ground state of an acceptor impurity in germanium
A discrete structure of the spectrum of the emission of long-wave IR laser by hot holes in Ge in E1H fields was observed. This structure is attributed to the additional gain on the transitions between the excited states and the ground state of the acceptor impurity. The mechanisms for the gain on the impurity-band transitions and transitions between the impurity states are discussed.