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VOLUME 52 (1990) | ISSUE 7 | PAGE 996
Microwave absorption at a junction between the ferromagnetic semiconductor HgCr2Se4 and the semiconductor InSb
The microwave absorption at a junction between the ferromagnetic semiconductor HgCr2 Se4 and the semiconductor InSb has been studied. A huge intensification of the magnetoplasma absorption was observed in the semiconductor during the flow of a current across the junction. An attempt is made to explain the results in terms of a polarization of the charge carriers in the semiconductor.