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VOLUME 52 (1990) | ISSUE 8 | PAGE 1049
Mechanism for the frozen photoconductivity of YBa2Cu3O7-δ
In the model proposed here, the density of hole carriers which are responsible for the electrical conductivity of the compound increases upon exposure to light as the result of a localization of electrons at oxygen vacancies of symmetry D 2h. During electron transitions, the positions of the atoms near the vacancies change, giving rise to an energy barrier. This barrier can be overcome through zero-point and thermal vibrations of the lattice. Numerical estimates of the barrier height and of the relaxation time agree with experimental data.