"Subthreshold" formation of defects in Y1Ba2Cu3O7-x single-crystal films
Daluda Yu. N. , Emtsev V. V. , Klinger M. I. , Tret'yakov V. V.
An increase in the resistance of Y!Ba2Cu307_ x single-crystal films (above the critical temperature), caused by the "subthreshold" x-ray bombardment at room temperature, has been observed experimentally. Such a subthreshold x-ray bombardment can be explained in terms of the ionization mechanism for the formation of structure defects: anion vacancies (oxygen ions).
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![](/ps/1161/article_17561_800_head.png "An increase in the resistance of Y!Ba2Cu<sub>3</sub>0<sub>7</sub>_ <i><sub>x</sub> </i>single-crystal films (above the critical temperature), caused by the "subthreshold" x-ray bombardment at room temperature, has been observed experimentally. Such a subthreshold x-ray bombardment can be explained in terms of the ionization mechanism for the formation of structure defects: anion vacancies (oxygen ions).")