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VOLUME 52 (1990) | ISSUE 11 | PAGE 1225
Kinetics of exciton trapping by shallow impurity centers
The binding of excitons to a shallow impurity center in a semiconductor (Si:B) has been studied, and the trapping coefficient has been determined (8 X 10 ~~8 cm3/s), for the first time. A study has been made of the kinetics of the perturbation caused in the steady-state spatial distribution of excitons in a sample by nonequilibrium acoustic phonons.