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VOLUME 52 (1990) | ISSUE 11 | PAGE 1233
Effect of dissipation-free edge currents on the magnetoresistance of a 2D electron gas in a strong magnetic field: Upper limit on magnetoresistance
It has been shown experimentally that the magnetoresistance Rxx (ν) of long channels in silicon field-effect transistors is equal to the difference between the Hall resistances at noninteger values of the filling factors (v) of the magnetic levels: SRxy = h /(e2j) — Rxy (ν), where the integer у corresponds to the closest, well-defined Hall plateau. An upper limit on the magnetoresistance is predicted. Its value would be equal to the difference between neighboring plateaus.