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VOLUME 53 (1991) | ISSUE 8 | PAGE 413
Single-particle tunneling through an EuS barrier
The differential current-voltage characteristics of the tunnel structure NbN-EuS-Pb were found to contain features that are associated with the existence of nonadditive components of single-particle tunneling through a ferromagnetic semiconductor barrier. These features could be caused by the phonon generation at the semiconductor-(ferromagnetic semiconductor) boundary.