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VOLUME 53 (1991) | ISSUE 10 | PAGE 499
Global dynamic hysteresis in an incommensurate phase in a semiconductor
A new approach is suggested for describing hysteresis eiFects in an incommensurate phase. The idea is to take account of the dynamics of the nonuniform electron density in trapping levels in the semiconductor. The interrelation between the observed anomalies in the physical properties of crystals and the characteristics of the semiconducting subsystems is established.