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VOLUME 53 (1991) | ISSUE 12 | PAGE 600
Impurity polarizability in silicon due to the magnetic degeneracy of donor states in a finite magnetic field
It is shown theoretically that the crossing of the energy levels Et (H) of shallow donor states of diiferent symmetries due to the anisotropy of the effective mass makes it possible to experimentally observe an anomalously high impurity polarization that is independent of the electric field.