Penetration of optical vibrations localized in the layers of GaAs/AIAs periodic structures into the barrier according to reflection spectra
Pusen Yu. A., Milekhin A. G., Moshegov N. T., Tikhomirov V. V., .Poropov A. I
Reflection spectra have been used for a study of optical vibrational modes localized in the GaAs layers of periodic (GaAs) n (Al As) m structures. Spectras indicating a partial penetration of GaAs phonons into the neighboring Al As layers are presented. The penetration depth is calculated in the model of a linear chain.