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VOLUME 54 (1991) | ISSUE 2 | PAGE 100
Slow relaxation of excited acceptor states in silicon
Recombination radiation has been observed to arise in indiumand boron-doped silicon in the region 30-100 //m at low temperatures during extrinsic photoexcitation. A long-term relaxation of this emission has been observed. A slow relaxation of the absorption of light in the region 6-10//m has also been observed in indium-doped silicon. These optical experiments confirm the existence of long-lived excited states of acceptors in silicon.