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VOLUME 51 (1990) | ISSUE 12 | PAGE 627
Tunneling from localized surface states of semiconductor with Coulomb correlations
The time-dependent problem of the tunneling from surface states of a semiconductor localized near the tip of a scanning tunneling microscope is analyzed. The Coulomb repulsion of the electrons in these states is taken into account. The average value of the tunneling current over a long time is derived. The relative fluctuations in this current are estimated. The conditions for experimentally observing this behavior are examined. The possibility of a tunneling spectroscopy of surface states in a dc regime is examined.