Home
For authors
Submission status

Current
Archive
Archive (English)
   Volumes 21-40
   Volumes 1-20
   Volumes 41-62
      Volume 62
      Volume 61
      Volume 60
      Volume 59
      Volume 58
      Volume 57
      Volume 56
      Volume 55
      Volume 54
      Volume 53
      Volume 52
      Volume 51
      Volume 50
      Volume 49
      Volume 48
      Volume 47
      Volume 46
      Volume 45
      Volume 44
      Volume 43
      Volume 42
      Volume 41
Search
VOLUME 57 (1993) | ISSUE 1 | PAGE 51
Raman scattering in GaAs/AlAs structures with paired quantum wells
Both nonresonant and resonant Raman scattering of light by longitudinal optical phonons have been studied in GaAs/AlAs structures with paired quantum wells. Because of the particular shape of the envelopes of the electron wave functions and potentials set up by the phonons, it was found possible, for the first time, to observe a scattering by odd and even localized LO phonons simultaneously under nonresonant conditions. The absence of peaks corresponding to odd phonons from the Raman scattering spectrum is explained on the basis of an additional scattering mechanism: a Frohlich interaction which is induced by defects and which leads to the predominance of even modes in the spectra.