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VOLUME 57 (1993) | ISSUE 4 | PAGE 222
Raman scattering by LO phonons in GaAs/AlAs superlattices with ultrathin AlAs layers
A study of Raman scattering by longitudinal optical phonons in GaAs/AlAs superlattices with ultrathin AlAs layers has made it possible to observe scattering by odd and even localized LO phonons simultaneously. An explanation for this result is proposed: a mechanism of Raman scattering due to defects.