Morphology of quantum wires of porous silicon
Karavanskii V. A. , Kachalov M. A. , Maslov A. P., Petrov Yu. N., Seleznev V. N. , Shuvalov A. O.
The morphology of individual pores in porous silicon has been observed by scanning tunneling microscopy. There is a quasiregular arrangement of pores. The dimensions of the quantum wires which form have been found to be 30-100 A.