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VOLUME 57 (1993) | ISSUE 10 | PAGE 638
Metal-semiconductor transition along thickness in an amorphous Sb layer
A metallic state has been produced in a layer of amorphous antimony ~20 nm thick by depositing Sb on an amorphous Bi layer. With a further increase in thickness, the Sb condensate forms in the ordinary semiconducting state. The difference between the conductivities of these two states of the amorphous antimony is approximately six orders of magnitude (at Τ= 20 К).