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VOLUME 57 (1993) | ISSUE 10 | PAGE 641
Concentration-induced transition to a conductivity with a constant hopping length involving states near the Fermi level in a field effect in slightly compensated Si:B
The low-temperature electrical conductivity of heavily doped Si:B films has been observed to increase and reach a plateau as the surface becomes depleted of majority carriers. The results are interpreted in terms of a concentration-induced transition to a new type of hopping conductivity.