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VOLUME 58 (1993) | ISSUE 3 | PAGE 197
Observation of 2D-exciton luminescence in germanium layers in periodic Ge-Ge1-xSix heterostructures
The photoluminescence in strained periodic Ge-Ge^^Si^ heterostructures with nanometer-thickness layers has been studied. Below 90 K, the observed emission results from a recombination of 2D excitons in the germanium layers.