Home
For authors
Submission status

Current
Archive
Archive (English)
   Volumes 21-40
   Volumes 1-20
   Volumes 41-62
      Volume 62
      Volume 61
      Volume 60
      Volume 59
      Volume 58
      Volume 57
      Volume 56
      Volume 55
      Volume 54
      Volume 53
      Volume 52
      Volume 51
      Volume 50
      Volume 49
      Volume 48
      Volume 47
      Volume 46
      Volume 45
      Volume 44
      Volume 43
      Volume 42
      Volume 41
Search
VOLUME 58 (1993) | ISSUE 3 | PAGE 215
Floating up of the extended states of Landau levels in a two-dimensional electron gas in silicon MOSFET's
Phase diagram in H, Ns plane for a 2D electron gas in Si MOSFET's has been studied. It was found that transition to a low-electron-density insulating phase occurs only if all the extended states have passed, leaving Fermi sea thrdugh the Fermi level. In contrast to the case of high magnetic fields, when the extended states of each Landau level follow its center, in weak magnetic fields they float up and finally combine upon lowering the magnetic field.